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1N4148-K
SILICON EPITAXIAL PLANAR DIODE
Fast switching diode
This diode is also available in MiniMELF case with the type designation LL4148.
Max. 0.45 Min. 28
Max. 1.75
Black Cathode Band Black Part No. Black "ST" Brand
XXX
ST
Max. 3.4
Min. 28
Glass Case DO-35 (K) Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 s
Symbol VRM VR IF(AV) IFSM Ptot Tj TS
Value 100 75 200 0.5 1 4 500
1)
Unit V V mA A mW
O
Power Dissipation Junction Temperature Storage Temperature Range
1)
200 - 65 to + 200
C C
O
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008
1N4148-K
Characteristics at Tj = 25 OC
Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 A at IR = 5 A Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
1)
Symbol VF
Min. -
Max. 1
Unit V
IR IR IR V(BR)R V(BR)R Ctot Vfr trr RthA V
100 75 -
200 5 50 4
nA A A V V pF
-
2.5
V
0.45
4 0.35 1) -
ns K/mW -
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
VRF =2V
2nF
60
5K
~ ~ ~
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008
Vo
1N4148-K
Forward characteristics mA 10
3
Dynamic forward resistance versus forward current 1N 4148 1N 4148 10 4
5 2 Tj=25 oC f=1KHz
10 2 iF 10
o Tj=100 C o Tj=25 C
10 3 rf
5 2
10 2 1
5 2
10 -1
10
5 2
10 -2 0 1 VF 2V
1 10 -2 10 -1 1 10 IF 10 2 mA
Admissible power dissipation versus ambient temperature
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Relative capacitance versus reverse voltage
mW 1000 900 800 700 600 500 400 300 200 100 0 0 100
1N 4148
1N 4148
Tj=25 oC f=1MHz
1.1 Ctot(VR) Ctot(0V) 1.0
Ptot
0.9
0.8
0.7
o
0 0 2 4 6 VR 8 10 V
200 C Tamb
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008
1N4148-K
Leakage current versus junction temperature nA 10 4
5 2
1N 4148
10 3 IR
5 2
10 2
5 2
10
5
VR=20V
2
1 0 100 Tj 200 C
o
Admissible repetitive peak forward current versus pulse duration A 100
5 4 3 2 Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
1N 4148
I v=tp/T T=1/fp
IFRM
tp
10 IFRM v=0
5 4 3 2
t T
0.1 0.2 0.5
1
5 4 3 2
0.1 10 -5
2 5
10 -4
2
5
10 -3
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008

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